elektronische bauelemente SSN3043 255ma , 20v , r ds(on) 3.4 n-channel enhancement mode power mosfet 28-oct-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ka rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets reduce power loss conserve energy, making this device idea l for use in small power management circuitry. features energy efficient application dc-dc converters, load switching, power management in portable and batteryCpowered products such as co mputers, printers, cellular and cordless telephones. marking package information package mpq leader size sot-723 8k 7 inch thermal characteristics parameter symbol rating unit drain C source voltage v ds 20 v gate C source voltage - continuous v gs 10 v t a =25c 255 steady state t a =85c 185 continuous drain current 1 t 5 s, t a =25c i d 285 ma steady state ,t a =25 c 440 power dissipation 1 t 5 s, t a =25c p d 545 mw t a =25c 210 continuous drain current 2 steady state t a =85c i d 155 ma power dissipation 2 steady state ,t a =25 c p d 310 mw pulsed drain current (tp 10 s) i dm 400 ma source current (body diode) 2 i s 286 ma maximum lead temperature for soldering purposes, (1/8 from case for 10 seconds) t l 260 c junction & storage temperature t j , t stg -55 ~ 150 c note: 1. surface?mounted on fr4 board using 1 in sq pad s ize (cu area = 1.127 in sq [1 oz] including traces) 2. surface?mounted on fr4 board using the minimum r ecommended pad size. sot-723 date code millimeter millimeter ref. min. max. ref. min. max. a 1.150 1.250 f 0.170 0. 270 b 0.750 0.850 g 0.270 0.370 c - 0.500 h 0 0.050 d 1.150 1.250 i - 0.150 e 0.800typ. 1 11 1 gate 2 22 2 source 3 33 3 drain top view
elektronische bauelemente SSN3043 255ma , 20v , r ds(on) 3.4 n-channel enhancement mode power mosfet 28-oct-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. maximum ratings (t j =25c unless otherwise specified) parameter symbol rating unit steady state 1 280 t = 5 s 1 228 maximum junctionCambient steady state minimum pad 2 r ja 400 c / w electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions off characteristics drain-source breakdown voltage v (br)dss 20 - - v v gs =0, i d =100 a drain?source breakdown voltage temperature coefficient v (br)dss / t j - 27 - mv/c i d =100 a, reference to 25 c gate-source leakage current i gss - - 1 a v gs = 5v, v ds =0 - - 1 v ds =16v, v gs =0, t j =25 c zero gate voltage drain current i dss - - 10 a v ds =16v, v gs =0, t j =125 c on characteristics 1 gate threshold voltage v gs(th) 0.4 - 1.3 v gate threshold temperature coefficient v gs(th) / t j - -2.4 - mv/c v ds =v gs , i d = 250 a forward transconductance g fs - 0.275 - s v ds =5v, i d =100ma - 1.5 3.4 v gs =4.5v, i d =10ma - 1.6 3.8 v gs =4.5v, i d =255ma - 2.4 4.5 v gs =2.5v, i d =1ma - 5.1 10 v gs =1.8v, i d =1ma drain-source on resistance r ds(on) - 6.8 15 v gs =1.65v, i d =1ma dynamic characteristics turn-on delay time t d(on) - 13 - rise time t r - 15 - turn-off delay time t d(off) - 94 - fall time 2 t f - 55 - ns v gs =4.5v, v dd =5v i d =10ma r g =6 input capacitance 2 c iss - 11 - output capacitance 2 c oss - 8.3 - reverse transfer capacitance 2 c rss - 2.7 - pf v ds =10v, v gs =0, f=1mhz source-drain diode - 0.83 1.2 v gs =0v, i s =286ma, t j =25 c forward diode voltage v sd - 0.69 - v v gs =0v, i s =286ma, t j =125 c reverse recovery time t rr - 9.1 - charge time t a - 7.1 - discharge time t b - 2 - ns reverse recovery charge 2 q rr - 3.7 - nc v gs =0v, v dd =20v, disd/dt=100a/ s i s =286ma notes: 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces ) 2. surface?mounted on fr4 board using the minimum recommended pad size. 3. pulse test: pulse width Q 300 s, duty cycle Q 2% 4. switching characteristics are independent of op erating junction temperature.
elektronische bauelemente SSN3043 255ma , 20v , r ds(on) 3.4 n-channel enhancement mode power mosfet 28-oct-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSN3043 255ma , 20v , r ds(on) 3.4 n-channel enhancement mode power mosfet 28-oct-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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